inchange semiconductor isc product specification isc silicon npn power transistor BDY71 description continuous collector current-i c = 4a collector power dissipation- : p c = 29w @t c = 25 applications designed for general purpose switching and amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 90 v v cex collector-emitter voltage v be = -1.5v 90 v v cer collector-emitter voltage r be = 100 60 v v ceo collector-emitter voltage 55 v v ebo emitter-base voltage 7 v i c collector current-continuous 4 a i b b base current-continuous 2 a p c collector power dissipation@t c =25 29 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 6.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY71 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 55 v v cer(sus) collector-emitter sustaining voltage i c = 100ma; r be = 100 60 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 0.5a; i b = 50ma 1.0 v v be( on ) base-emitter on voltage i c = 0.5a; v ce = 4v 1.7 v i ceo collector cutoff current v ce = 30v; i b = 0 b 0.5 ma i cev collector cutoff current v ce = 90v; v be(off) = 1.5v v ce = 30v; v be(off) = 1.5v,t c =150 1.0 5.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma h fe dc current gain i c = 0.5a ; v ce = 4v 80 200 f t current gain-bandwidth product i c = 0.2a; v ce = 10v 0.8 mhz isc website www.iscsemi.cn 2
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